| To make the most efficient solar cells, the conversion of light to electricity must be maximized. Recombination reduces the efficiency by allowing excited electrons to return to the ground state before escaping the cell. We study the recombination process to explore this loss mechanism and how it can be minimized. The first paper below describes a recombination investigation that reveals new details in the energy level distribution of a semiconductor. The second paper discusses the temperature dependence of various recombination pathways. |
Defect-related density of states in low-bandgap InGaAs/InAsP double heterostructures grown on InP substratesT.H. Gfroerer, L.P. Priestley, and F.E. WeindruchDepartment of Physics, Davidson College, Davidson, NC 28035 M.W. WanlassNational Renewable Energy Laboratory, Golden, CO 80401 in Applied Physics Letters 80, 4570 (2002).
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Temperature dependence of nonradiative recombination in low-band gap InGaAs/InAsP double heterostructures grown on InP substratesT.H. Gfroerer and L.P. PriestleyDepartment of Physics, Davidson College, Davidson, NC 28035 M.F. FairleySpelman College, Atlanta, GA 30314 M.W. WanlassNational Renewable Energy Laboratory, Golden, CO 80401 in Journal of Applied Physics 94, 1738 (2003). |